A Ferroelectric and Charge - Based Hybrid Nonvolatile Memory
نویسندگان
چکیده
We introduce a new one-transistor nonvolatile memory, which benefits from the two seemingly unrelated memory mechanisms; namely ferroelectric (FE) polarization and nonvolatile charge injection. The hybrid memory demonstrates larger memory window and reduced depolarization field during retention compared to conventional FE-FETs. This summary discusses the working principle, device fabrication and experimental results of the proposed memory device.
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تاریخ انتشار 2011